No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

作者：Liu Fei^*; Mo Fu-Yao; Li Li; Su Zan-Jia; Huang Ze-Qiang; Deng Shao-Zhi; Chen Jun; Xu Ning-Sheng

来源：Chinese Physics B, 2010, 19(10): 107205.

DOI：10.1088/1674-1056/19/10/107205

• AlN nanocone
• low-temperature growth
• no-catalyst
• field-emission

The AlN nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating AlN nanostructures, but high growth temperature over 800 degrees C and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned AlN nanocone arrays at 550 degrees C on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/mu m and a threshold field of 11.7 V/mu m as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.

• 出版日期2010-10
• 单位中山大学