Ultrahigh-Performance Inverters Based on CdS Nanobelts

作者：Wu Peicai; Ye Yu; Sun Tuo; Peng Ruoming; Wen Xiaonan; Xu Wanjin; Liu Cui; Dai Lun^*

来源：ACS Nano, 2009, 3(10): 3138-3142.

DOI：10.1021/nn9008438

• CdS
• high-kappa dielectrics
• nanobelt
• field-effect transistors
• inverter

We report ultrahigh-performance inverters, each consisting of two top-gate metal-oxide-semiconductor field-effect transistors based on n-CdS nanobelts. High-kappa HfO(2) dielectrics are used as the top-gate oxide layers. The inverters have a large supply voltage (V(DD)) range (from 50 mV to 10 V) and very high voltage gain (similar to 10, 100, and 1000 at V(DD) = 0.2, 1, and 10 V, respectively). Current consumption is less than 7 nA at V(DD) = 1 V, corresponding to a power consumption of less than 7 nW. The high and low output voltages are close to full rail. The inverters also exhibit good dynamic behavior with square wave input at frequencies up to 1 kHz. The operation of the inverters is analyzed in detail. The inverters are promising for future low power high performance logic circuit applications.

• 出版日期2009-10
• 单位北京大学