Examining the electrical and chemical properties of reduced graphene oxide with varying annealing temperatures in argon atmosphere

作者：Chambers Benjamin A; Notarianni Marco; Liu Jinzhang; Motta Nunzio^*; Andersson Gunther G

来源：Applied Surface Science, 2015, 356: 719-725.

DOI：10.1016/j.apsusc.2015.07.197

• Graphene oxide
• Graphene
• Electron spectroscopy
• Conductivity

Graphene oxide flakes were successfully fabricated and deposited as a film onto a silicon substrate. A series of these samples were annealed at various temperatures under a low pressure argon environment. The valence structure of the surface is examined using ultraviolet photoelectron spectroscopy whilst the chemical nature of the surface is examined using X-ray photoelectron spectroscopy. The sheet resistance was measured to document the performance changes with variation in electronic and chemical nature of the surface. It was found that increasing the annealing temperature increased the 2p pi content leading to a better conductivity and reduction in sheet resistance.

• 出版日期2015-11-30
• 单位北京航空航天大学