Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers

作者：Kim Soo Jin; Park Young Su; Lyu Si Hoon; Lee Jang Sik^*

来源：Applied Physics Letters, 2010, 96(3): 033302.

DOI：10.1063/1.3297878

• gold
• organic semiconductors
• polymer films
• random-access storage

Controlled gold nanoparticle (Au(NP))-based nonvolatile memory devices were developed based on pentacene organic transistors and polymethylmethacrylate (PMMA) insulator layers. The memory device had the following configuration: n+Si gate/SiO(2) blocking oxide/polyelectrolytes/Au(NP)/PMMA tunneling dielectric layer/Au source-drain. According to the programming/erasing operations, the memory device showed good programmable memory characteristics with a large memory In addition, good reliability was confirmed by the data retention characteristics. The fabrication procedures for the charge trapping and tunneling layers were based on simple solution processes (by dipping and spin-coating) and the maximum processing temperature was < 100 degrees C, so this method has potential applications in plastic/flexible electronics.

• 出版日期2010-1-18