The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

作者：Lee Gwang Geun^*; Tokumitsu Eisuke; Yoon Sung Min; Fujisaki Yoshihisa; Yoon Joo Won; Ishiwara Hiroshi

来源：Applied Physics Letters, 2011, 99(1): 012901.

DOI：10.1063/1.3608145

We demonstrated flexible ferroelectric gate thin-film transistors (Fe-TFTs) with ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and amorphous indium gallium zinc oxide (a-IGZO) channel on the polyethylene-naphthalate (PEN) substrate. First, we confirm basic ferroelectric properties of the P(VDF-TrFE) film on the PEN substrate with various bending radius. Next, we fabricated Fe-TFTs with Al/120 nm-P(VDF-TrFE)/40 nm-IGZO top gate structure. Excellent electrical characteristics are demonstrated and nonvolatile memory function was confirmed with a memory window of 8.4 V. A subthreshold voltage swing of 400 mV/decade, I(on)/I(off) ratio of more than 10(7) and the field-effect mobility of similar to 1 cm(2)/Vs were obtained.

• 出版日期2011-7-4