Atomic-scale characterization of Si(110)/6H-SiC(0001) heterostructure by HRTEM

作者：Li, L. B.^*; Chen, Z. M.; Zang, Y.; Feng, S.

来源：Materials Letters, 2016, 163: 47-50.

DOI：10.1016/j.matlet.2015.10.017

• Si/6H-SiC heterostructure
• Epitaxial growth
• Crystal structure
• Transmission electron microscopy

The atomic structure of Si(110)/SiC(0001) heterojunctions prepared on 6H-SiC(0001) was characterized by transmission electron microscopy and X-ray diffraction. An FCC-on-HCP parallel epitaxy is achieved for the Si(110)/SiC(0001) heterostructure with a growth temperature of 1050 degrees C and the in-plane orientation relationship is Si[1-10]//6H-SiC[11-20]. The pure edge misfit dislocations with a Burgers vector of 1/3 < 11-20 > sic parallel to the interface are observed to accommodate the extreme lattice mismatch. Along the in-plane orientation Si[1-10]SiC[11-20], the Si/6H-SiC interface has a 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26%. The misfit dislocation density at the Si/SiC interface is calculated as 1.217 x 10(14) cm(-2).

• 出版日期2016-1-15
• 单位西安工程大学; 西安理工大学