摘要
Conformal coating of metal layers on three-dimensional structures is essential for advanced electronic devices such as storage elements, transistors, and sensors. The quality of atomic layer deposited platinum on oxide surfaces was enhanced by adding pre-deposition pulses of trimethylaluminum (TMA) for improved wetting. With an optimal number of TMA pre-pulses, a 6 nm thick Pt film was perfectly coalesced in contrast to only Pt island formation without TMA pre-pulses. A Pt gate all around Ge/Si nanowire field effect transistor was realized highlighting the potential of this approach for efficient deposition of Pt on 3D nanoelectronic devices.
- 出版日期2013-12-23