摘要
Macroscopic P3HT spherulitic crystals are grown in 25-nm-thick films via precise control of solvent swelling during polymer crystallization, which allow placement of transistor channels within single oriented crystal domains. Charge-transport anisotropy in the b-c (p-stacking %26 main chain) plane and the role of order-disorder grain boundaries are reported.
- 出版日期2012-2-7