6H-SiC JFETs for 450 degrees C Differential Sensing Applications

作者：Patil Amita C^*; Fu Xiao an; Anupongongarch Chompoonoot; Mehregany Mehran; Garverick Steven L

来源：Journal of Microelectromechanical Systems, 2009, 18(4): 950-961.

DOI：10.1109/JMEMS.2009.2021831

• Differential amplifier
• high-temperature electronics
• junction field-effect transistor (JFET)
• silicon carbide integrated circuit (IC)

N-channel 6H-SiC depletion-mode junction field-effect transistors (JFETs) have been fabricated, and characterized for use in high-temperature differential sensing. Electrical characteristics of the JFETs have been measured and are in good agreement with predictions of an abrupt-junction long-channel JFET model. The electrical characteristics were measured across a 2-in wafer for temperatures from 25 degrees C to 450 degrees C, and the extracted pinchoff voltage has a mean of 11.3 V and a standard deviation of about 1.0 V at room temperature, whereas pinchoff current has a mean of 0.41 mA with standard deviation of about 0.1 mA. The change in pinchoff voltage is minimal across the measured temperature range, whereas pinchoff current at 450 degrees C is about half its value at room temperature, consistent with the expected change in the n mu(n) product. The characterization of differential pairs and hybrid amplifiers constructed using these differential pairs is also reported. A three-stage amplifier with passive loads has a differential voltage gain of 50 dB, and a unity-gain frequency of 200 kHz at 450 degrees C, limited by test parasitics. A two-stage amplifier with active loads has reduced sensitivity to off-chip parasitics and exhibits a differential voltage gain of 69 dB with a unity-gain frequency of 1.3 MHz at 450 degrees C.

• 出版日期2009-8