科研之友
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摘要
Silicon carbide layers were grown on a Si substrate at a temperature below 1100 degrees C and pressure of 10(5) Pa. The synthesis was carried out in a tube furnace through cyclic heating process using methane as a carbon source and Sm-Co mixed powder as a solvent. The growth of SiC from rare earth Sm-based solvent is an innovative approach, and Co can promote the formation of solvent during the growth process. The structural and compositional analyses were carried out using X-ray diffraction, electron probe micro-analyzer, scanning electron microscopy and transmission electron microscopy. Results indicated that beta-SiC was successfully fabricated on Si (1 1 1) substrate. The heterogeneous nucleation of beta-sic was found to be observed initially at the edge of triangle-shaped sites on Si (1 1 1) surface that formed due to the existence of Co, and then grew and expanded to form beta-SiC film. The growth process of SiC via vapour-liquid-solid mechanism was also discussed in this study.
- 出版日期2011-12
