Low-field electron mobility in wurtzite InN

作者：Polyakov VM^*; Schwierz F

来源：Applied Physics Letters, 2006, 88(3): 032101.

DOI：10.1063/1.2166195

We report on the low-field electron mobility in bulk wurtzite InN at room temperature and over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) method. All relevant phonon scatterings are included in the MC simulation. The scattering with ionized impurities is considered in the basic Brooks-Herring and Conwell-Weisskopf formulations. For the steady-state transport, the drift velocity attains a peak value of similar to 5 x 10(7) cm/s at an electric field strength of 32 kV/cm. The highest calculated low-field mobility for undoped InN amounts to similar to 14 000 cm(2)/V s at room temperature. We compare our theoretically calculated low-field mobilities with experimental data available in the literature and obtain a quite satisfactory agreement. Finally, an empirical low-field mobility model based on the MC simulation results and experimental mobility data is presented.

• 出版日期2006-1-16