A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano devices

作者：Cheng Yingda; Gamba Irene M^*; Majorana Armando; Shu Chi Wang

来源：Computer Methods in Applied Mechanics and Engineering, 2009, 198(37-40): 3130-3150.

DOI：10.1016/j.cma.2009.05.015

• Deterministic numerical methods
• Discontinuous Galerkin schemes
• Boltzmann-Poisson systems
• Statistical hot electron transport
• Semiconductor nano-scale devices

In this paper, we present results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nano-scale active regions under applied bias. The proposed numerical technique is a finite element method using discontinuous piecewise polynomials as basis functions on unstructured meshes. It is applied to simulate hot electron transport in bulk silicon, in a silicon n( )-n-n( ) diode and in a double gated 12 nm MOSFET. Additionally, the obtained results are compared to those of a high order WENO scheme simulation and DSMC (Discrete Simulation Monte Carlo) solvers.

• 出版日期2009