Nitride Nanocolumns for the Development of Light-Emitting Diode

作者：Tang Tsung Yi; Lin Cheng Hung; Chen Yung Sheng; Shiao Wen Yu; Chang Wen Ming; Liao Che Hao; Shen Kun Ching; Yang Chih Chung; Hsu Ming Chi; Yeh Jui Hung; Hsu Ta Cheng

来源：IEEE Transactions on Electron Devices, 2010, 57(1): 71-78.

DOI：10.1109/TED.2009.2034795

• Coalescence overgrowth
• light-emitting diode (LED)
• nitride nanocolumn (NC)

The progress of light-emitting-diode (LED) development based on nitride nanocolumn (NC) growth, including InGaN/GaN quantum-well (QW) growth on NCs and regularly arranged GaN NC growth, is first reviewed. Then, the coalescence-overgrowth results based on patterned GaN NC growth are introduced. The overgrowth quality dependence on NC cross-sectional size and NC spacing size is discussed. Generally, a smaller NC dimension and spacing size lead to higher overgrowth quality, including lower threading dislocation (TD) density and larger lateral domain size. Next, the emission enhancement results of blue-and green-emitting InGaN/GaN QW and LED structures based on NC growth and coalescence overgrowth are presented. Significant enhancements (up to similar to 100% output intensity increase in a blue LED) are demonstrated. For LED applications, the TD density reduction in an overgrown GaN template can more effectively enhance the emission efficiency of a blue LED, when compared with a green LED.

• 出版日期2010-1
• 单位中国科学院电工研究所