Ultralow Contact Resistivity of Cu/Au With p-Type ZnS Nanoribbons for Nanoelectronic Applications

作者：Yu, Yongqiang^*; Zeng, Longhui; Jiang, Yang; Jie, Jiansheng

来源：IEEE Electron Device Letters, 2013, 34(6): 810-812.

DOI：10.1109/LED.2013.2258319

• Cu/Au electrode
• ohmic contact
• p-type
• Schottky barrier diodes
• ZnS nanoribbons (NRs)

Here, we report a new metallization scheme for achieving excellent ohmic contact to p-type II-VI nanostructures at room temperature. Bilayer electrodes consisting of Cu (4 nm)/Au (50 nm) provided a specific contact resistivity as low as 5.6 x 10(-7) Omega cm(2) with p-ZnS nanoribbons (NRs). Interface analysis via depth profiling X-ray photoemission spectroscopy, Auger electron spectroscopy, and high-resolution transmission electron microscopy revealed the formation of a highly conductive Cu2S interfacial layer, which could serve as the buffer layer and thus promote the hole transport from NR to electrode. High-performance Ti/p-ZnS NR Schottky barrier diodes were then fabricated based on the Cu/Au ohmic contact.

• 出版日期2013-6
• 单位合肥工业大学; 苏州大学