Anodic Nb2O5 Nonvolatile RRAM

作者：Kundozerova T V^*; Grishin A M; Stefanovich G B; Velichko A A

来源：IEEE Transactions on Electron Devices, 2012, 59(4): 1144-1148.

DOI：10.1109/TED.2011.2182515

• Conduction mechanism
• dielectric film
• impedance spectroscopy
• memristor
• niobium pentoxide
• retention characteristics
• unipolar resistance switching

We report nonvolatile resistive switching in anodic niobium pentoxide thin-film memory cells. Highly dielectric Nb2O5 films were prepared at room temperature by the anodic oxidation of submicrometer-thick Nb films sputtered onto an Si wafer. After the electroforming process, Au/Nb2O5/Nb/Si sandwich memory cells demonstrate reproducible direct current and pulse mode switching between two resistance states with a resistance ON-OFF ratio around 10(3). Low and high resististive states show ohmic conductivity and field-assisted Poole-Frenkel-type conductivity, respectively. Nonvolatile resistance storage was traced within 40 days to quantify retention characteristics of the Nb2O5 memristor. The low-temperature anodic oxidation of Nb was found to be feasible to fabricate high-density cross-point memory with 3-D stack structures.

• 出版日期2012-4