Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization

作者：Gerrer Louis^*; Brown Andrew R; Millar Campbell; Hussin Razaidi; Amoroso Salvatore Maria; Cheng Binjie; Reid Dave; Alexander Craig; Fried David; Hargrove Michael; Greiner Ken; Asenov Asen

来源：IEEE Transactions on Electron Devices, 2015, 62(6): 1739-1745.

DOI：10.1109/TED.2015.2402440

• Compact model
• Design-Technology Co-Optimisation (DTCO)
• device
• simulation
• Technology Computer Aided Design (TCAD)
• variation
• virtual fabrication

In this paper we illustrate how the predictive Technology Computer Aided Design (TCAD) process device simulation can be used to evaluate process, statistical, and time-dependent variability at the early stage of the development of new technology. This is critically important for the delivery of accurate early Process Design Kits, including process variability, statistical variability, time-dependent variability (degradation) and their interactions and correlations. This is also critical to the TCAD-based Design-Technology Co-Optimisation (DTCO). To accomplish this task, the fast, large area Coventor virtual fabrication platform SEMulator3D was integrated in the Gold-StandradSimulations TCAD-based DTCO tool chain. Published data for Intel 22-nm FinFET technology are used to illustrate and validate the results of the TCAD process and device simulation, the compact model extraction, and the statistical circuit simulation.

• 出版日期2015-6