Unipolar resistive switching in porous perovskite-like Bi3.15Nd0.85Ti3O12 thin films

作者：Song, H. J.^*; Wang, Z. J.; Wang, J. B.^*; Zhong, X. L.

来源：Journal of Materials Science: Materials in Electronics , 2018, 29(8): 6660-6665.

DOI：10.1007/s10854-018-8651-x

• MEMORIES

In this study, the unipolar resistive switching (RS) effect is exhibited in porous perovskite-like Bi3.15Nd0.85Ti3O12 (BNT) thin films fabricated on Pt/Ti/SiO2/Si substrates through chemical solution deposition technique employed PEG template. The unipolar RS characteristics can be adjusted by the size and density of the pores in the porous perovskite-like Bi3.15Nd0.85Ti3O12 thin films. The size and density of the pores are controlled by the processing parameters of the annealing temperature or the dwell time or the both during the preparation of the porous perovskite-like Bi3.15Nd0.85Ti3O12 thin films. The porous BNT thin films annealed at 720 A degrees C for 10 min show large current ratio of low/high resistance state of four orders and low operating voltage of 5 V for SET and 1.5 V for RESET. Moreover, the LRS/HRS can be reversed repeatedly without large decay. After the retention test of 10(4) s for low/high resistance state, the devices still show as large current ratio of low/high resistance state as about four orders. The present study should have guide to develop a unipolar RS memory using the perovskite oxides.

• 出版日期2018-4
• 单位湘潭大学