Universal stress-defect correlation at (100)semiconductor/oxide interfaces

作者：Houssa M^*; Scarrozza M; Pourtois G; Afanas'ev V V; Stesmans A

来源：Applied Physics Letters, 2011, 98(14): 141901.

DOI：10.1063/1.3575559

Interface models between various group IV and III-V (100)semiconductors and their oxides are generated from first-principles molecular dynamics simulations. The tensile strain at the interface (from the semiconductor side) is estimated, by comparing bond lengths at/near the interface and in the bulk semiconductor phase. A linear relationship between the calculated interface stress and the density of interface defects observed at such interfaces is revealed. These results suggest that the interface stress due to the volume mismatch between the semiconductor and its oxide likely plays an important role in the creation of interface defects. These findings can explain recent results pertaining to the passivation of various high-mobility channels for their integration in high-performance metal-oxide-semiconductor field-effect transistors.

• 出版日期2011-4-4