Design of Digital Circuits Using Inverse-Mode Cascode SiGe HBTs for Single Event Upset Mitigation

作者：Thrivikraman Tushar K^*; Wilcox Edward; Phillips Stanley D; Cressler John D; Marshall Cheryl; Vizkelethy Gyorgy; Dodd Paul; Marshall Paul

来源：IEEE Transactions on Nuclear Science, 2010, 57(6): 3582-3587.

DOI：10.1109/TNS.2010.2074214

• Digital circuits
• heterojunction bipolar transistors
• radiation hardening
• silicon germanium

We report on the design and measured results of a new SiGe HBT radiation hardening by design technique called the "inverse- mode cascode" (IMC). A third-generation SiGe HBT IMC device was tested in a time resolved ion beam induced charge collection (TRIBICC) system, and was found to have over a 75% reduction in peak current transients with the use of an n-Tiedown on the IMC sub-collector node. Digital shift registers in a 1st-generation SiGe HBT technology were designed and measured under a heavy-ion beam, and shown to increase the LET threshold over standard npn only shift registers. Using the CREME96 tool, the expected orbital bit-errors/day were simulated to be approximately 70% lower with the IMC shift register. These measured results help demonstrate the efficacy of using the IMC device as a low-cost means for improving the SEE radiation hardness of SiGe HBT technology without increasing area or power.

• 出版日期2010-12