A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing

作者：De Matteis M^*; De Blasi M; Vallicelli E A; Zannoni M; Gervasi M; Bau A; Passerini A; Baschirotto A

来源：Review of Scientific Instruments, 2017, 88(2): 024702.

DOI：10.1063/1.4975177

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a twochip system (theACS+ LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stableLNAs characterization, switchingon, and operating point (< 4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 mu m technology (12 mm(2) area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device. Published by AIP Publishing.

• 出版日期2017-2