Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

作者：Navarro Carlos^*; Rodriguez Noel; Ohata Akiko; Gamiz Francisco; Andrieu Francois; Fenouillet Beranger Claire; Faynot Olivier; Cristoloveanu Sorin

来源：IEEE Electron Device Letters, 2012, 33(8): 1102-1104.

DOI：10.1109/LED.2012.2198193

• Effective field
• mobility
• SOI-MOSFETs
• split C(V)
• ultrathin SOI
• universal mobility

A novel technique for the accurate carrier mobility evaluation in ultrathin fully depleted SOI-MOSFETs is proposed. The mobility representation, obtained from the combination of Poisson-Schrodinger numerical simulations and split C(V) experimental results, discloses the mobility dependence on the effective field by accounting for the actual electric field and carrier profiles in the body of the device. As example of this technique, we show that the apparent larger mobility enhancement, due to back-gate bias, observed in thin-BOX transistors with respect to thick-BOX devices, is related to an electric field reduction rather than other technological factors.

• 出版日期2012-8
• 单位中国地震局