Analysis of Class-DE Amplifier With Linear and Nonlinear Shunt Capacitances at 25% Duty Ratio

作者：Sekiya Hiroo^*; Sagawa Natsumi; Kazimierczuk Marian K

来源：IEEE Transactions on Circuits and Systems I-Regular Papers, 2010, 57(9): 2334-2342.

DOI：10.1109/TCSI.2010.2043013

• Class-DE power amplifier
• class-E zero-voltage switching (ZVS)/zero-derivative switching (ZDS) conditions
• equivalent linear shunt capacitance
• high efficiency
• nonlinear MOSFET drain-source parasitic capacitance

The class-E zero-voltage switching/zero-derivative switching operation within class-DE amplifiers can be easily achieved by adding external shunt capacitances. This paper gives the analytical expressions for the designs of the class-DE amplifiers with the shunt capacitances composed of linear and nonlinear capacitances for any grading coefficient of MOSFET body junction diodes at the switch-on duty ratio D = 0.25. In the analysis, an equivalent linear shunt capacitance of the nonlinear MOSFET drain-source parasitic capacitances is derived. Analytical results show good agreements with the simulation and experimental ones, which validate our analysis.

• 出版日期2010-9