An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film

作者：Wu ZH; Lai PT^*; Li B; Kwok PCK; Liu BY; Zheng XR

来源：Solid-State Electronics, 2005, 49(1): 25-30.

DOI：10.1016/j.ssc.2004.07.005

• minority-carrier exclusion
• two-dimensional model
• temperature sensor
• silicon film

An analytical two-dimensional model is developed to explain the minority-carrier exclusion effect in circular spreading-resistance temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor.

• 出版日期2005-1
• 单位华南理工大学