科研之友
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摘要
A simple high-order curvature-compensated technique for CMOS bandgap voltage reference (BVR) is presented and its advantage over the conventional ones is that this technique needs no extra circuitry for curvature compensation. The experimental prototype circuit is fabricated in CSMC 0.18 mu m CMOS process and occupies an area of 0.053 mm(2). A temperature coefficient (TC) of 10.1 ppm/degrees C is achieved with temperature ranging from -40 degrees C to 120 degrees C under 3 V power supply. The line regulation of the output reference is only 0.85 mV/V.
