Attempting to realize n-type BiCuSeO

作者：Zhang, Xiaoxuan; Feng, Dan; He, Jiaqing; Zhao, Li-Dong^*

来源：Journal of Solid State Chemistry, 2018, 258: 510-516.

DOI：10.1016/j.jssc.2017.11.012

• N-type BiCuSeO
• Thermoelectric
• Electrical conductivity
• Seebeck coefficient
• Thermal conductivity

As an intrinsic p-type semiconductor, BiCuSeO has been widely researched in the thermoelectric community, however, n-type BiCuSeO has not been reported so far. In this work, we successfully realized n-type BiCuSeO through carrying out several successive efforts. Seebeck coefficient of BiCuSeO was increased through introducing extra Bi/Cu to fill the Bi/Cu vacancies that may produce holes, and the maximum Seebeck coefficient was increase from +447 mu VK-1 for undoped BiCuSeO to +638 mu VK-1 for Bi1.04Cu1.05SeO. The Seebeck coefficient of Bi1.04Cu1.05SeO was changed from p-type to n-type through electron doping through introducing Br/I in Se sites, the maximum negative Seebeck coefficient can reach similar to-465 mu VK-1 and -543 mu VK-1 for Bi1.04Cu1.05Se1-xIxO and Bi1.04Cu1.05Se1-xBrxO, respectively. Then, after compositing Bi1.04Cu1.05Se0.99Br0.01O with Ag, n-type BiCuSeO can be absolutely obtained in the whole temperature range of 300-873 K, the maximum ZT similar to 0.05 was achieved at 475 K in the Bi1.04Cu1.05Se0.99Br0.01O+15% Ag. Our report indicates that it is possible to realize n-type conducting behaviors in BiCuSeO system.

• 出版日期2018-2
• 单位北京航空航天大学