Atomic layer deposition of bismuth oxide using Bi((OCMe2Pr)-Pr-i)(3) and H2O

作者：Austin Dustin Z^*; Allman Derryl; Price David; Hose Sallie; Saly Mark; Conley John F Jr

来源：Journal of Vacuum Science and Technology A, 2014, 32(1): 01A113.

DOI：10.1116/1.4840835

Bismuth oxide thin films were deposited by atomic layer deposition using Bi((OCMe2Pr)-Pr-i)(3) and H2O at deposition temperatures between 90 and 270 degrees C on Si3N4, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi2O3 films deposited at 150 degrees C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm(3), band gap of approximately 2.9 eV, low carbon content, and show the beta phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210 degrees C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.

• 出版日期2014-1