A Novel Pre-Distortion Circuit of Lasers Fabricated in 0.18-mu m CMOS Technology

作者：Fan, Chen^*; Wang, Zhi-Gong; Wang, Rong

来源：IEEE Photonics Technology Letters, 2017, 29(22): 1987-1989.

DOI：10.1109/LPT.2017.2758352

• Analogue broadband pre-distortion
• phase shifter
• time delay line
• VGA
• third-order inter-modulation distortion
• RoF

A novel CMOS analogue broadband pre-distortion circuit fabricated in a 0.18-mu m CMOS technology is presented in this letter. The pre-distortion circuit consists of a common-gate amplifier and a gain-booting amplifier. The pre-distortion signal can be adjusted by changing the biased voltage of the transistor. Without phase shifters, time delay lines and VGAs, the circuit can be easily implemented for its simple structure. The chip area is 0.58 x 0.47 mm(2) including all the pads, and it consumes 7.74 mW with 1.8-V supply voltage. In the RoF system, the measured results show that the third-order inter-modulation distortion has a significant reduction of 16 dBc at 1.8-GHz frequency when the pre-distortion circuit is used.

• 出版日期2017-11-15
• 单位东南大学