Dual-channel 4H-SiC metal semiconductor field effect transistors

作者：Zhu C L^*; Rusli; Zhao P

来源：Solid-State Electronics, 2007, 51(3): 343-346.

DOI：10.1016/j.sse.2006.12.002

• SIC
• MESFET
• dual-channel layer

4H-SiC metal-semiconductor field effect transistors (MESFETs) with a dual-channel layer are fabricated and characterized. The higher doped lower-channel layer serves to increase the channel current while the lower doped upper-channel layer is used to improve the breakdown voltage. The thickness and doping concentration of the lower-channel layer are 0.08 mu m and 5.2 x 10(17) cm(-3) respectively, while for the upper-channel layer, the values are 0.12 mu m and 1.4 x 10(17) cm(-3) respectively. The dual-channel MESFETs with 1 mu m gate length have a saturation drain current density of 280 mu A/mu m, source-drain breakdown voltage of 145 V and maximum output power density of 4.6 W/mm. These results are improved compared to conventional single channel MESFETs fabricated in this work using the same process with a channel thickness of 0.20 mu m and doping concentration of 2.4 x 10(17) cm(-3).

• 出版日期2007-3
• 单位南阳理工学院