Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers

作者：Chen J^*; Fan W J; Ding Y; Xu Q; Zhang X W; Xu D W; Yoon S F; Zhang D H

来源：Opto-Electronics Review, 2011, 19(4): 449-453.

DOI：10.2478/s11772-011-0043-1

• band structure
• k.p method
• quantum dots (QDs)
• optical gain
• vertical cavity surface emitting lasers (VCSELs)
• micro-photoluminescence (mu-PL)

We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optical spectrum. Our simulation result is in good agreement with the experimental micro-photoluminescence (mu-PL) result which is from InAs/GaAs QD vertical cavity surface emitting lasers (VCSELs) structure wafer at room temperature. Accordingly, our simulation model is used to predict the QD emission from this QD-VCSELs structure wafer at different temperature ranging from 200-400 K. The simulation results show a decrease of 41 me V of QD ground state (GS) transition energy from 250-350 K. The changes of QD GS transition energy with different temperature indicate the possible detuning range for 1.3-mu m wave band QD-VCSELs applications without temperature control. Furthermore, QD differential gain at 300 K is computed based on this model, which will be useful for predicting the intrinsic modulation characteristics of QD-VCSELs.

• 出版日期2011-12
• 单位南阳理工学院