摘要
Silicon is the primary semiconductor material used to fabricate microchips. A series of processes are required to manufacture high-quality silicon wafers. Surface grinding is one of the processes used to flatten wire-sawn wafers. A major issue in grinding of wire-sawn wafers is reduction and elimination of wire-sawing induced waviness. Results of finite element analysis have shown that soft-pad grinding is very effective in reducing the waviness. This paper presents an experimental investigation into soft-pad grinding of wire-sawn silicon wafers. Wire-sawn wafers from a same silicon ingot were used for the study to ensure that these wafers have similar waviness. These wafers were ground using two different soft pads. As a comparison, some wafers were also ground on a rigid chuck. Effectiveness of soft-pad grinding in removing waviness has been clearly demonstrated.
- 出版日期2004-2