Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (<= 200 degrees C)

作者：Lee Kyoung Min; Kim Tae Hwan; Hwang Jae Dam; Jang Seunghun; Jeong Kiyoung; Han Moonsup; Won Sunghwan; Sok Junghyun; Park Kyoungwan; Hong Wan Shick^*

来源：Scripta Materialia, 2009, 60(8): 703-705.

DOI：10.1016/j.scriptamat.2008.12.054

• Silicon nanocrystals
• Low temperature process
• Catalytic CVD

We observed a wide range of photoluminescence (PL) energy variation from silicon nanocrystals prepared at a low temperature (<= 200 degrees C). The size of the silicon nanocrystals was controlled by varying the NH(3)/SiH(4) mixture ratio. The PL peaks consist of three compounds: nanocrystalline silicon, amorphous silicon and nitrogen dangling bond. The luminescence from the silicon nanocrystals was dominant and its wavelength varied from 510 to 710 nm as the subgrain size changed from 3.5 to 5 nm.

• 出版日期2009-4