摘要

A fast transient-response digital low-dropout regulator ( D-LDO) is presented. To achieve fast-transient time, a VSSa generator and a coarse-fine power-MOS array techniques are proposed. The proposed D-LDO is implemented in a 65 nm CMOS technology with a die area of 0.067 mm(2). The measured recovery time is less than 0.32 us when the load step-up time is 0.1 us from 2.5mA to 120 mA, and the step-down time is 0.1 us at 1.2V of supply voltage. Moreover, the voltage spikes are less than 190mV.

  • 出版日期2017-7-10

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