科研之友
微信
新浪微博
Facebook
分享链接
摘要
We observed a drastic change in electronic domain structures during the metal-insulator transition (MIT) via strong elastic coupling in single crystalline VO2 films. The domain structure drastically changed from one type to another due to increasing elastic coupling with film thickness. This drastic change was caused by energetic competition between elastic coupling and structural disorder during the MIT, suggesting the microscopic stress engineering facilitate the electronic domain control in functional oxides.
- 出版日期2015-5-6
