Dislocation and Saturation Current Density Analysis by Rear-Side Al Amount Variation for n-Type Al-p(+) Emitter Crystalline Silicon Solar Cell

作者：Park Cheolmin; Lee Jonghwan; Yang Doohwan; Ba Nagarajan; Ju Minkyu; Yitz Junsin^*

来源：Science of Advanced Materials, 2016, 8(3): 563-568.

DOI：10.1166/sam.2016.2506

• Al-p(+) Emitter
• N-Type Silicon Solar Cell
• Dislocation
• Saturation Current Density

This paper presents a dislocation and saturation of current density analysis by varying the amount of rear-side Al. The fabrication process optimizes an aluminum-alloyed emitter using a screen printing number and varying the co-firing on n-type crystalline silicon (c-Si) wafers using a suitable industry method. N-type silicon materials have high diffusion-lengths due to the reduced recombination activities of metal impurities and other nonmetallic defects compared with p-type silicon and this fulfills the requirement for innovative solar cells. To utilize the advantage of the n-type silicon wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we adopted screen-printing and co-firing of aluminum (Al) alloyed n(+)n p(+) solar cells featuring a rear Al-p(+) emitter easily fabricated through the screen-printing process. We achieved a back surface field (BSF) that was 7 mu m in thickness by applying 13.14 mg/cm(2) of Al paste in by printing on both sides and heating the material in an high temperature infra-red (IR) furnace at a peak temperature of 756.5 degrees C. In the furnace, the temperature increased at a rate of 70.82 degrees C/sec with an efficiency of 17.36%, saturation current density J(01) of 7.16 x 10(-9) mA/cm(2) and J(02) of 3.55 x 10(-5) mA/cm(2), respectively.

• 出版日期2016-3