An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

作者：Liu Yan^*; Georgiou Pantelis; Prodromakis Themistoklis; Constandinou Timothy G; Toumazou Christofer

来源：IEEE Transactions on Electron Devices, 2011, 58(12): 4414-4422.

DOI：10.1109/TED.2011.2168821

• Chemical sensor
• CMOS
• drift
• geometry
• ion-sensitive field-effect transistor (ISFET)
• noise
• passivation capacitance
• subthreshold slope
• threshold voltage

This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-mu m CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first-and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model.

• 出版日期2011-12