摘要

A low-power and wide-locking-range 55.8-GHz (V-band) injection-locked frequency-divider (ILFD) using standard 0.13 mu m in CMOS technology is reported. To enhance locking range, a shunt indicator was introduced in the source trade of the cross-coupled pair to maximize the equivalent load impedance of the tail transistor, i.e. to maximize the internal power, over the frequency band of interest. In addition, the inductors and capacitors of the LC-tank were implemented by low-Q micro-stripline inductors and high-Q varactors. respectively, to further improve the locking range of the ILFD. The result shows that a wide-locking-range of 7.1 GHz (from 48.7 GHz to 55.8 GHz 13.6%) was achieved. The power consumption of the ILFD is only 2 mW from a 1.1 V power supply. The chip area was only 0.66 X 0.48 mm(2) excluding the test pads.

  • 出版日期2009-3