Narrow-band anisotropic electronic structure of ReS2

作者：Biswas D; Ganose Alex M; Yano R; Riley J M; Bawden L; Clark O J; Feng J; Collins Mcintyre L; Sajjad M T; Meevasana W; Kim T K; Hoesch M; Rault J E; Sasagawa T; Scanlon David O; King P D C^*

来源：PHYSICAL REVIEW B, 2017, 96(8): 085205.

DOI：10.1103/PhysRevB.96.085205

We have used angle-resolved photoemission spectroscopy to investigate the band structure of ReS2, a transitionmetal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of structural distortion and spin-orbit coupling. We further show how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zigzag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone center along k(z). These experiments are in good agreement with our density-functional theory calculations, shedding light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer.

• 出版日期2017-8-16
• 单位中国地震局