3D silicon pixel sensors: Recent test beam results

作者：Hansson P^*; Balbuena J; Barrera C; Bolle E; Borri M; Boscardin M; Chmeissan M; Dalla Betta G F; Darbo G; Da Via C; Devetak E; DeWilde B; Su D; Dorholt O; Fazio S; Fleta C; Gemme C; Giordani M; Gjersdal H; Grenier P; Grinstein S; Hasi J; Helle K; Huegging F; Jackson P; Kenney C; Kocian M; Korolkov I; La Rosa A; Mastroberardino A; Micelli A; Nellist C; Nordahl P; Rivero F; Rohne O; Sandaker H; Silverstein D; Sjoebaek K

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2011, 628(1): 216-220.

DOI：10.1016/j.nima.2010.06.321

• Silicon sensors
• 3D sensors
• Radiation detectors
• ATLAS upgrade
• SLHC

The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified-3D assemblies fabricated at FBK-irst with partially overlapping electrodes. In both cases three read-out electrodes are ganged together to form pixels of dimension 50 x 400 mu m(2). Data on the pulse height distribution, tracking efficiency and resolution were collected for various particle incident angles, with and without a 1.6 T magnetic field. Data from a planar sensor of the type presently used in the ATLAS detector were used at the same time to give comparison. Published by Elsevier B.V.

• 出版日期2011-2-1