Mapping Defect Density in MBE Grown In0.53Ga0.47As Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics

作者：Majumdar Kausik^*; Thomas Paul; Loh Wei Yip; Hung Pui Yee; Matthews Ken; Pawlik David; Romanczyk Brian; Filmer Matthew; Gaur Abhinav; Droopad Ravi; Rommel Sean L; Hobbs Chris; Kirsch Paul D

来源：IEEE Transactions on Electron Devices, 2014, 61(6): 2049-2055.

DOI：10.1109/TED.2014.2318597

• III-V on Si
• epi defect density
• Esaki diode
• excess current
• negative differential resistance
• tunneling

Growing good quality III-V epitaxial layers on Si substrate is of utmost importance to produce next generation high-performance devices in a cost effective way. In this paper, using physical analysis and electrical measurements of Esaki diodes, fabricated using molecular beam epitaxy grown In0.53Ga0.47As layers on Si substrate, we show that the valley current density is strongly correlated with the underlying epi defect density. Such a strong correlation indicates that the valley characteristics can be used to monitor the epi quality. A model is proposed to explain the experimental observations and is validated using multiple temperature diode I-V data. An excess defect density is introduced within the device using electrical and mechanical stress, both of which are found to have a direct impact on the valley current with a negligible change in the peak current characteristics, qualitatively supporting the model predictions.

• 出版日期2014-6