Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

作者：Zhang Guangchen^*; Feng Shiwei; Li Jingwan; Zhao Yan; Guo Chunsheng

来源：Chinese Journal of Semiconductors, 2012, 33(4): 044003.

DOI：10.1088/1674-4926/33/4/044003

• AlGaN/GaN HEMTs
• AlGaN/GaN high electron mobility transistors
• Channel temperature
• Electrical methods
• GaN material
• High spectral resolution
• Highest temperature
• Infrared images
• Lorentz fitting
• Measurement uncertainty
• Micro Raman Spectroscopy
• Micro-Raman
• Phonon frequencies
• Temperature dependence

Channel temperature determinations of AlGaN/GaN high electron mobility transistors (HEMTs) by high spectral resolution micro-Raman spectroscopy are proposed. The temperature dependence of the E2 phonon frequency of GaN material is calibrated by using a JYT-64000 micro-Raman system. By using the Lorentz fitting method, the measurement uncertainty for the Raman phonon frequency of ±0.035 cm-1 is achieved, corresponding to a temperature accuracy of ±3.2 °C for GaN material, which is the highest temperature resolution in the published works. The thermal resistance of the tested AlGaN/GaN HEMT sample is 22.8 °C/W, which is in reasonably good agreement with a three dimensional heat conduction simulation. The difference among the channel temperatures obtained by micro-Raman spectroscopy, the pulsed electrical method and the infrared image method are also investigated quantificationally.

• 出版日期2012
• 单位北京大学