Epitaxial SrRuO3 thin films on LaAlO3(100) and Si(100)

作者：Roldan J; Sanchez F^*; Trtik V; Guerrero C; Benitez F; Ferrater C; Varela M

来源：Applied Surface Science, 2000, 154: 159-164.

DOI：10.1016/S0169-4332(99)00412-2

• SrRuO3
• conductive oxide
• epitaxial growth
• pulsed laser deposition
• silicon substrates

Epitaxial SrRuO3 (SRO) thin films were deposited by pulsed laser deposition on LaAlO3(100) and Si(100) substrates, A study of the influence of substrate temperature and oxygen partial pressure on the structural and electrical properties is presented for films deposited on LaAlO3(100). The dependence of the properties of SRO on film thickness was also studied. The crystal properties improved when a SrTiO3 (STO) seed layer was used, although the surface of the SRO films deposited on this layer had a high density of outgrowths. SRO thin films deposited on Si(100) were epitaxial when an yttria-stabilised zirconia (YSZ) buffer layer was used. The crystal structure and morphology of these films was determined.

• 出版日期2000-2