科研之友
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摘要
A power amplifier (PA) with a saturated output power of 24.1 dBm at 32 GHz, fabricated in a 250 nm SiGe BiCMOS technology, is presented. This PA operates in Class AB and achieves a power-added efficiency (PAE) of 7.2% with a gain of approximately 25 dB and a die area of 1.70 mm(2). A differential cascode output stage with a self-shielded balun is used, allowing to maximize the output voltage swing. The driver stage consists of translinear loops to bias and linearize the output stage while a transformer-type power combiner is implemented to achieve broadband on-chip power combination.
- 出版日期2015-3
