AlXGa1-XN Cladding Effect on Intraband Absorption of InGaN Disk Embedded in GaN Nanowire

作者：Akter Afroja; Yoo Geonwook; Kim Sangin; Baac Hyoung Won^*; Heo Junseok^*

来源：Journal of Nanoscience and Nanotechnology, 2017, 17(5): 3279-3284.

DOI：10.1166/jnn.2017.14060

• Intraband
• Absorption
• Nanowire
• GaN

The electronic intraband absorption in InGaN nanodisks embedded in GaN nanowires with several kinds of cladding materials and without cladding was theoretically investigated. The cladding layer was 5 nm thick, and AlN, GaN, and Al0.4Ga0.6N were considered. The strain distribution, internal electric field, and intraband absorption in the nanodisks were calculated using the elastic energy minimization method and the single-band Schrodinger equation implemented in Nextnano3. For a plain nanowire without cladding, an inhomogeneous strain in the disk caused a piezoelectric field and deformation potential, yielding band-bending and a higher electron probability density in the periphery of the disk. An InGaN nanodisk embedded in a cladding GaN nanowire exhibited a higher intraband absorption. The case of the GaN cladding was optimal owing to the homogeneous surroundings of the disk.

• 出版日期2017-5