摘要

A 130 nm Transimpedance Amplifier has been developed with a 255 MHz bandwidth, 90 dB Omega transimpedance gain and a dynamic input range of 1:325 or 50 dB for a photo-diode capacitance of 0.75 pF. The equivalent integrated input noise is 160 nA @ 25 degrees C. The gain of the voltage amplifier, used in the transimpedance amplifier (TIA), degrades less than 3% over a temperature range from -40 degrees C up to 125 degrees C. The TIA and attenuator exhibit a radiation tolerance larger than 4 MGy, as evidenced by radiation assessment.

  • 出版日期2013-2

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