An electrically injected rolled-up semiconductor tube laser

作者：Dastjerdi M H T; Djavid M; Mi Z^*

来源：Applied Physics Letters, 2015, 106(2): 021114.

DOI：10.1063/1.4906238

We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of similar to 1.5 mu m. A lasing threshold of similar to 1.05mA is measured for a rolled-up tube with a diameter of similar to 5 mu m and wall thickness of similar to 140 nm at 80 K. The Purcell factor is estimated to be similar to 4.3.

• 出版日期2015-1-12
• 单位McGill