A Rigorous Model for Through-Silicon Vias With Ohmic Contact in Silicon Interposer

作者：Yang, De-Cao^*; Xie, Jianyong; Swaminathan, Madhavan; Wei, Xing-Chang; Li, Er-Ping

来源：IEEE Microwave and Wireless Components Letters, 2013, 23(8): 385-387.

DOI：10.1109/LMWC.2013.2270459

• Crosstalk
• metal-oxide-semiconductor (MOS) capacitance
• ohmic contact
• signal integrity
• through-silicon via (TSV)

High-density through-silicon via (TSV) interconnects in silicon interposer require effective crosstalk-reduction signaling schemes and rigorous crosstalk modeling techniques. In this letter, we propose a rigorous model for grounded TSVs with ohmic contact. The proposed model takes into account contact resistance, doping density, and doping-region capacitance for the metal-silicon interface of grounded TSVs. The comparison between modeling results and full-wave simulations validates the accuracy of the proposed model for signal-ground-signal vias.

• 出版日期2013-8
• 单位浙江大学