4H-SiC Schottky diode arrays for X-ray detection

作者：Lioliou G^*; Chan H K; Gohil T; Vassilevski K V; Wright N G; Horsfall A B; Barnett A M

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2016, 840: 145-152.

DOI：10.1016/j.nima.2016.10.002

• Silicon carbide
• Schottky diodes
• X-ray spectroscopy
• High temperature

Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20 degrees C to 140 degrees C. The performance at 30 degrees C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2x2 or 1x3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm(2) at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 degrees C. The measured energy resolution (FWHM at 17.4 keV, Mo K alpha) varied from 1.36 to 1.68 keV among different diodes.

• 出版日期2016-12-21