Direct characterization of spin-transfer switching of nano-scale magnetic tunnel junctions using a conductive atomic force microscope

作者：Lee Jia Mou^*; Yang Dong Chin; Lee Ching Ming; Ye Lin Xiu; Chang Yao Jen; Lee Yen Chi; Wu Jong Ching; Wu Te ho

来源：Journal of Physics D: Applied Physics , 2013, 46(17): 175002.

DOI：10.1088/0022-3727/46/17/175002

We present an alternative method of spin-transfer-induced magnetization switching for magnetic tunnel junctions (MTJs) using a conductive atomic force microscope (CAFM) with pulsed current. The nominal MTJ cells' dimensions were 200 x 400 nm(2). The AFM probes were coated with a Pt layer via sputtering to withstand up to several milliamperes. The pulsed current measurements, with pulse duration varying from 5 to 300 ms, revealed a magnetoresistance ratio of up to 120%, and an estimated intrinsic switching current density, based on the thermal activation model, of 3.94 MA cm(-2). This method demonstrates the potential skill to characterize nanometre-scale magnetic devices.

• 出版日期2013-5-1