Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 mu m

作者：Meng, P. B.^*; Yao, B. Q.; Zhou, R. L.; Chen, F.; Ju, Y. L.; Wang, Y. Z.

来源：Laser Physics, 2011, 21(4): 643-647.

DOI：10.1134/S1054660X11070243

• CONTINUOUS-WAVE OPERATION
• Q-SWITCH OPERATION
• TMYLF LASER
• TM
• HO
• WAVELENGTH
• POWER
• YAG

Room-temperature operation of a single longitudinal-mode c-cut Tm(6%), Ho(0.4%):YLF microchip laser is reported. An incident pump power of 713 mW is used to generate the maximum single-frequency output power of 17 mW at 2050.5 nm, which corresponds to the slope efficiency of 10%.

• 出版日期2011-4
• 单位哈尔滨工业大学