Analytic channel potential solution to the undoped surrounding-gate MOSFETs

作者：He, Jin^*; Tao, Yadong; Liu, Feng; Feng, Jie; Yang, Shengqi

来源：Solid-State Electronics, 2007, 51(5): 802-805.

DOI：10.1016/j.sse.2007.02.035

• non-classical CMOS
• surrounding-gate MOSFETs
• surface potential
• compact modeling

A continuous and analytic channel potential solution for uncloped (lightly doped) surrounding-gate (SRG) MOSFETs is presented in this article. It is based on the exact solution of Poisson's equation, allowing the surface potential to be adequately described from the subthreshold to strong inversion region. It is demonstrated that the analytic channel potential characteristics agree with the Newton-Raphson iterative solutions for all ranges of gate and quasi- Fermi-potential.

• 出版日期2007-5
• 单位北京大学; 北京大学深圳研究生院